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Proceedings Paper

Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement
Author(s): K. Saito; T. Saeki; X. Han; T. Tanaka; Q. Guo; M. Nishio
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Paper Abstract

High VI/II transport rate ratio for Al-doped ZnTe homoepitaxial layers grown by metalorganic vapor phase epitaxy leads to distinct shallow and deep donor-acceptor-pair (DAP) emissions in the photoluminescence spectrum together with donor-related bound excitonic emission (Id), independent of the growth conditions. From the analysis of excitation power dependence of shallow DAP emission, donor and acceptor levels are estimated to be ~19.5 and ~53.5meV for Al-doped ZnTe layer, respectively. Thermal quenching effects of Id and shallow DAP were examined based on two step quenching processes, and the derived donor ionization energy is of ~ 19 meV and acceptor level is of ~52.8 meV, which are in good agreement with the result on its excitation power dependence for the latter case.

Paper Details

Date Published: 18 February 2011
PDF: 5 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950I (18 February 2011); doi: 10.1117/12.888520
Show Author Affiliations
K. Saito, Saga Univ. (Japan)
T. Saeki, Saga Univ. (Japan)
X. Han, Saga Univ. (Japan)
T. Tanaka, Saga Univ. (Japan)
Q. Guo, Saga Univ. (Japan)
M. Nishio, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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