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Proceedings Paper

Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants
Author(s): Jingwei Guo; Hui Huang; Minjia Liu; Xiaomin Ren; Shiwei Cai; Wei Wang; Qi Wang; Yongqing Huang; Xia Zhang
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Paper Abstract

N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.

Paper Details

Date Published: 7 January 2011
PDF: 6 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870M (7 January 2011); doi: 10.1117/12.888518
Show Author Affiliations
Jingwei Guo, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Minjia Liu, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Shiwei Cai, Beijing Univ. of Posts and Telecommunications (China)
Wei Wang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xia Zhang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)

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