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Proceedings Paper

Air-annealing effects on SiO2/ITO coating
Author(s): Yiqin Ji; Deying Chen; Weihao Li; Bingjun Wu; Jie Zong; Dandan Liu; Yanmin Zhang
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Paper Abstract

Indium tin oxide (ITO) thin film with SiO2 protective upper layer prepared by electron beam evaporation was annealed in air up to 300°C. Evolution of transmittance, resistance and surface morphology of this SiO2/ITO coating was studied. Transmittance in visible and near-infrared range both increased while absorption edge exhibited red shift after annealing. Resistance increased monotonously with rising annealing temperature, yet increments became smaller at temperatures above 270°C. Micron-defects were observed on the surface of SiO2/ITO coating after annealing. Enhancement of crystallinity of ITO layer at high temperatures was thought to be responsible for these morphology and resistance evolutions.

Paper Details

Date Published: 17 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799502 (17 February 2011); doi: 10.1117/12.888408
Show Author Affiliations
Yiqin Ji, Harbin Institute of Technology (China)
Tianjin Jinhang Institute of Technical Physics (China)
Deying Chen, Harbin Institute of Technology (China)
Weihao Li, Tianjin Jinhang Institute of Technical Physics (China)
Bingjun Wu, Tianjin Jinhang Institute of Technical Physics (China)
Jie Zong, Tianjin Jinhang Institute of Technical Physics (China)
Dandan Liu, Tianjin Jinhang Institute of Technical Physics (China)
Yanmin Zhang, Tianjin Jinhang Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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