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Proceedings Paper

Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control
Author(s): Hafizal Yahaya; Yoshifumi Ikoma; Keiji Kuriyama; Teruaki Motooka
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Paper Abstract

We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ~10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH3SiH3 pulse jets.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799520 (18 February 2011); doi: 10.1117/12.888388
Show Author Affiliations
Hafizal Yahaya, Kyushu Univ. (Japan)
Univ. Teknologi Malaysia (Malaysia)
Yoshifumi Ikoma, Kyushu Univ. (Japan)
Keiji Kuriyama, Kyushu Univ. (Japan)
Teruaki Motooka, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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