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Proceedings Paper

Preparation of an optically activated field effect transistor based on diamond film
Author(s): Lingyun Shi; Ke Tang; Jian Huang; Qinkai Zeng; Linjun Wang
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Paper Abstract

Freestanding diamond (FSD) film with p-type hydrogen-terminated nucleation surface was prepared by microwave plasma chemical vapour deposition (MPCVD) method. The post-treatment (wet chemical etch and annealing process) on the property of diamond film was investigated. The preparation and characterization of hydrogen-terminated diamond film p-type channel metal-semiconductor field effect transistors (MESFETs) was studied. The device was also used for photodetector application. The results showed the potential of high switching speed and high sensitivity to ultraviolet (UV).

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799526 (18 February 2011); doi: 10.1117/12.888360
Show Author Affiliations
Lingyun Shi, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Qinkai Zeng, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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