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Proceedings Paper

Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers
Author(s): Keyong Chen; Xue Feng; Yidong Huang
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Paper Abstract

Layer-thickness dependence of Si-nanocrystal (Si-NC) formation induced by furnace annealing in amorphous Si (a-Si) /SiO2 multilayers is experimentally demonstrated with a radio-frequency-sputtered sample that has a-Si layers with different thicknesses. Further, a modified model is developed to explain the Si-NC formation based on the Gibbs free energy variation and it takes into account the whole formation process including nucleation and following growth. The theoretical results show that there is a lower limit of Si layer thickness below which the crystal formation cannot occur for a-Si/SiO2 multilayers, and the oxide interfaces cannot constrain the lateral growth of Si-NCs, which may lead to their touches within the Si layers.

Paper Details

Date Published: 12 January 2011
PDF: 6 pages
Proc. SPIE 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II, 799102 (12 January 2011); doi: 10.1117/12.888342
Show Author Affiliations
Keyong Chen, Tsinghua Univ. (China)
Xue Feng, Tsinghua Univ. (China)
Yidong Huang, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 7991:
Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II
Heonsu Jeon; Min Gu; Yi Luo; Chih-Chung Yang; Muqing Liu, Editor(s)

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