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Proceedings Paper

Silicon nitride films as the diffusion barriers for flexible CIGS thin film solar cells
Author(s): Juan Qin; Aimin Li; Zhenyi Chen; Lei Zhao; Xiaoli Zhang; Weimin Shi; Guangpu Wei
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Paper Abstract

Impurity diffusion from the flexible metal substrate into CIGS absorption layer can remarkably reduce cell performance comparing with conventional glass substrate. A diffusion barrier layer lying between the metal substrate and Mo backcontact layer is required to prevent this spread of impurities. In this paper, a set of Si3+xN4-x barrier layers are grown on stainless steel sheets and alloy foils by the magnetron sputtering under different conditions. The morphological, structural and electrical properties of the samples are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and I-V measurements. Our results indirectly support good blocking effect of Si3+xN4-x barrier to the metal impurities from the stainless steel substrate.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952Y (18 February 2011); doi: 10.1117/12.888292
Show Author Affiliations
Juan Qin, Shanghai Univ. (China)
Aimin Li, Shanghai Univ. (China)
Zhenyi Chen, Shanghai Univ. (China)
Lei Zhao, Shanghai Univ. (China)
Xiaoli Zhang, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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