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Proceedings Paper

Study of TCR of TiW alloy films deposited by magnetron sputtering
Author(s): Changlong Cai; Yujia Zhai; Shun Zhou; Huan Liu; Jing Huang; Weiguo Liu
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Paper Abstract

TiW alloy is not only a excellent infrared radiant material, but also a infrared sensitive material, and was often used as a film in the infrared thermal imaging detectors. The temperature coefficient of resistance (TCR) of TiW alloy film is an important parameter influencing the characteristic, so it is very necessary to study the effect of TiW alloy films deposition parameters on TCR. In this paper, TiW alloy films were deposited by DC magnetron sputtering on ordinary glass, and the target is high pure TiW alloy material ((Ti:W)atom=3:7), the working gas is Ar. The square resistance of TiW alloy films under the different temperature was measured using four-point probe meter, and TCR was calculated according to the measurement curve. The influence of working pressure, Ar flow rate and sputtering current on the TCR of TiW alloy films was investigated. After studying, the best process parameters were obtained, that are, sputtering current 0.32A, working pressure 0.8Pa, and Ar flow rate 60sccm. Under these condition, TCR of TiW alloy films is 2‰/K. The measurement results indicate that the time stability of TiW alloy films is excellent.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799506 (18 February 2011); doi: 10.1117/12.888281
Show Author Affiliations
Changlong Cai, Xi'an Technological Univ. (China)
Yujia Zhai, Xi'an Technological Univ. (China)
Shun Zhou, Xi'an Technological Univ. (China)
Huan Liu, Xi'an Technological Univ. (China)
Jing Huang, Xi'an Technological Univ. (China)
Weiguo Liu, Xi'an Technological Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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