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Proceedings Paper

Preparation and optical properties of polycrystalline HgI2 thin films utilizing vertical deposition technique of chemistry
Author(s): Jie Zhou; Weimin Shi; Guangpu Wei; Juan Qin; Linjun Wang; Jieli Chen
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Paper Abstract

Mercuric Iodide (HgI2) is a promising semiconductor material for nuclear radiation detectors working at room temperature, especially for x-ray and γ-ray detectors. The influences of different growth temperatures on qualities of thin films were studied. The structure and optical properties of thin films were characterized by x-ray diffraction spectroscopy, metallography and UV-VIS spectrophotometer. Our results can be summarized as following: XRD analysis shows crystallinity of HgI2 in thin films depends mainly on the growth temperatures, that is, the XRD reflections become stronger with the decrease of the growth temperature. The optimum growth temperature for preparation of polycrystalline HgI2 thin film utilizing vertical deposition technique of chemistry is about 20°C. The corresponding thin film has a good uniformity with thickness of about 800 nm, perpendicular to the substrate along <001> direction. Based on its optical performance testing, our calculations found that HgI2 thin film grown at 20°C has a wide energy band gap of about 2.26 eV.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799523 (18 February 2011); doi: 10.1117/12.888249
Show Author Affiliations
Jie Zhou, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Jieli Chen, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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