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Proceedings Paper

Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering
Author(s): Jianhua Ma; Yan Liang; Xiaojing Zhu; Jinchun Jiang; Shanli Wang; Niangjuan Yao; Junhao Chu
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Paper Abstract

Mo doped ZnO thin films (ZnO:Mo, MZO) were prepared on quartz glass substrates by RF magnetron sputtering at the lower substrate temperatures (room temperature (RT) and 100°C). Their structural, electrical and optical properties were studied by X-ray diffractometry (XRD), four probe technique, Hall measurement, and UV-VIS-NIR spectrophotometer, respectively. XRD showed that the resultant films were wurtzite structure with c-axis preferential orientation. As the substrate temperatures increasing, the thickness of the film increased and the crystallinity became better. The resistivity of the films were 3.44x10-3 Ω•cm and 3.31x10-3 Ω•cm for the films deposited at RT and 100°C, respectively. The corresponding average transmittance in visible and near IR region (400-1100nm) was 81.7 % and 74.5 %, respectively. In addition, for the film deposited at 100°C, the refractive index (n) and band gap (Eg) were obtained by fitting the transmittance spectra and discussed.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951G (18 February 2011); doi: 10.1117/12.888246
Show Author Affiliations
Jianhua Ma, Shanghai Institute of Technical Physics (China)
Shanghai Ctr. for Photovoltaics (China)
Yan Liang, Shanghai Ctr. for Photovoltaics (China)
Xiaojing Zhu, Shanghai Institute of Technical Physics (China)
Jinchun Jiang, Shanghai Ctr. for Photovoltaics (China)
Shanli Wang, Shanghai Ctr. for Photovoltaics (China)
Niangjuan Yao, Shanghai Ctr. for Photovoltaics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)
Shanghai Ctr. for Photovoltaics (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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