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Proceedings Paper

Preparation of polycrystalline silicon thin films on glass by aluminiuminduced crystallization
Author(s): Jieli Chen; Weimin Shi; Jing Jin; Weiguang Yang; Yang Liao; Yueyang Xu; Linjun Wang; Guangpu Wei
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Paper Abstract

Polycrystalline silicon (p-Si) is well-known as the high-efficency, low-cost, and most ideal material for manufacturing photovoltaic devices. In recent years, excimer-laser annealing (ELA), metal-induced crystallization (MIC) and solidphase crystallization (SPC) methods are employed to crystallize amorphous silicon (a-Si). In this paper, a cheap metal induced crystallization method of fabricating p-Si thin films on an ordinary glass substrate was investigated. In this synthesis process, a-Si thin film has been deposited onto glass substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD), and p-Si thin films have been fabricated by aluminium-induced crystallization (AIC) under nitrogen ambient. The effects of annealing time, annealing temperature on the crystallization of a-Si were investigated by X-ray diffraction (XRD) technique. Our results indicate that annealing temperature over 300°C is necessary for crystallization of a-Si which preferred to orientation crystalline Si(111) and this preferred orientation becomes more obvious as increasing of annealing time and annealing temperature. Meanwhile, the longer annealing time can produce more a-Si crystallize completely under same aluminium thickness and annealing temperature.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799524 (18 February 2011); doi: 10.1117/12.888230
Show Author Affiliations
Jieli Chen, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Jing Jin, Shanghai Univ. (China)
Weiguang Yang, Shanghai Univ. (China)
Yang Liao, Shanghai Univ. (China)
Yueyang Xu, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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