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Proceedings Paper

Study of high temperature piezoelectric scandium aluminum nitride thin films
Author(s): Xiaolei Shi; Yigang Chen; Weimin Shi; Linjun Wang
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Paper Abstract

AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (18 February 2011); doi: 10.1117/12.888228
Show Author Affiliations
Xiaolei Shi, Shanghai Univ. (China)
Yigang Chen, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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