Share Email Print

Proceedings Paper

Study of high temperature piezoelectric scandium aluminum nitride thin films
Author(s): Xiaolei Shi; Yigang Chen; Weimin Shi; Linjun Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (18 February 2011); doi: 10.1117/12.888228
Show Author Affiliations
Xiaolei Shi, Shanghai Univ. (China)
Yigang Chen, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

© SPIE. Terms of Use
Back to Top