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Proceedings Paper

Crystallization of amorphous silicon films by a Nd:YAG laser and correlated surface morphology
Author(s): Jing Jin; Lu Huang; Zhijun Yuan; Weimin Shi; Zechun Cao; Jun Zhou
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Paper Abstract

The phosphorous (P)-doped hydrogenated amorphous silicon (a-Si:H) thin films were crystallized by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser with laser beam shaping system introduced by a fly-eye lens array. The correlations among crystallization, stress and microstructures with surface morphology during crystallization process can be determined. The increased crystalline fraction (XC) is realized by a considerable stress release. It is observed that the periodic two dimensional grid patterns with the period of about 15 μm are formed at laser energy density (EL) of 740 mJ/cm2 and are very sensitive to the energy density. Further increasing laser energy density to laser ablation can give rise to the irradiation damage on the film with poor crystalline quality and high surface roughness.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950E (18 February 2011); doi: 10.1117/12.888222
Show Author Affiliations
Jing Jin, Shanghai Univ. (China)
Lu Huang, Shanghai Univ. (China)
Zhijun Yuan, Shanghai Institute of Optics and Fine Mechanics (China)
Weimin Shi, Shanghai Univ. (China)
Zechun Cao, Shanghai Univ. (China)
Jun Zhou, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications

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