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Proceedings Paper

High uniformity HgI2 thick film prepared by ultrasonic wave-assisted physical vapor deposition
Author(s): Lei Nie; Weimin Shi; Weigang Yang; Lei Ma; Liangliang Chen; Guangpu Wei
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Paper Abstract

Poly-HgI2 films with an average small grain size of about 50μm were obtained on ITO substrates by ultrasonic wave-assisted vapor deposition method whose deposition temperature can be as low as 40 degree celsius. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum characterization suggested that the film grew along the (001) crystal plane with uniform grain size. Dark current of the film and its response to X-ray had also been investigated with Au as pixel electrodes, the response uniformity on all 16 pixels is within 10%.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951H (18 February 2011); doi: 10.1117/12.888221
Show Author Affiliations
Lei Nie, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Weigang Yang, Shanghai Univ. (China)
Lei Ma, Shanghai Univ. (China)
Liangliang Chen, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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