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Proceedings Paper

Studies on a novel structure of ZnO/AlN/ diamond for SAW device applications
Author(s): Qingkai Zeng; Linjun Wang; Jian Huang; Ke Tang; Yiben Xia
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Paper Abstract

The highly c-axis-oriented AlN buffer layers were successfully deposited on the nucleation sides of free-standing diamond (FD) films by direct current (DC) magnetron sputtering method. The influence of the sputtering parameters, such as the gas pressure and the sputtering plasma composition of Ar-to-N2, on the properties of AlN thin films were investigated. X-ray diffraction (XRD) measurements showed that when the gas pressure was 0.2 Pa and the plasma composition of Ar-to-N2 was 3:1, the higher intensity of the (002) diffraction peak and the narrower full width at half maximum (FWHM) were detected, which meant high c-axis orientation and high quality of AlN films. At last, a ZnO thin film was deposited on this buffer layer. The XRD and AFM results indicated that the sandwich structure can satisfy the application of surface acoustic wave (SAW) devices.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951J (18 February 2011); doi: 10.1117/12.888220
Show Author Affiliations
Qingkai Zeng, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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