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Proceedings Paper

Oriented SnS thin films formed by nano-multilayer method
Author(s): Zhan Xu; Yigang Chen; Weimin Shi; Linjun Wang
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Paper Abstract

Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799515 (18 February 2011); doi: 10.1117/12.888219
Show Author Affiliations
Zhan Xu, Shanghai Univ. (China)
Yigang Chen, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications

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