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Proceedings Paper

Preparation and characterization of (110) diamond films used for field-effect transistors
Author(s): Fengjuan Zhang; Qinkai Zeng; Xiaoyu Pan; Mei Bi; Xingmao Yan; Jian Huang; Ke Tang; Jijun Zhang; Linjun Wang
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Paper Abstract

In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951B (18 February 2011); doi: 10.1117/12.888210
Show Author Affiliations
Fengjuan Zhang, Shanghai Univ. (China)
Qinkai Zeng, Shanghai Univ. (China)
Xiaoyu Pan, Shanghai Univ. (China)
Mei Bi, Shanghai Univ. (China)
Xingmao Yan, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Jijun Zhang, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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