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Proceedings Paper

The annealing effects on the ZnO/diamond film heterojunction diode
Author(s): Jian Huang; Linjun Wang; Ke Tang; Jijun Zhang; Weimin Shi; Yiben Xia; Xionggang Lu
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Paper Abstract

ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799522 (18 February 2011); doi: 10.1117/12.888200
Show Author Affiliations
Jian Huang, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Jijun Zhang, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)
Xionggang Lu, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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