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Proceedings Paper

MBE growth and electrical properties of InSb film on GaAs substrate
Author(s): Y. H. Zhang; P. P. Chen; T. Lin; H. Xia; T. X. Li
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Paper Abstract

A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952G (18 February 2011); doi: 10.1117/12.888173
Show Author Affiliations
Y. H. Zhang, Shanghai Institute of Technical Physics (China)
P. P. Chen, Shanghai Institute of Technical Physics (China)
T. Lin, Shanghai Institute of Technical Physics (China)
H. Xia, Shanghai Institute of Technical Physics (China)
T. X. Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications

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