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Proceedings Paper

Silicon quantum dots: photoluminescence controlling and solar cell application
Author(s): Wen Zhong Shen
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Paper Abstract

In this invited paper, we report the effect of different annealing environments on the changeable radiative recombination characteristics of Si quantum dots (QDs), which not only provides ways to identify the photoluminescence mechanism, but also realizes the possibility to control the origin of the luminescence. We also focus on the application of Si QDs in the third-generation solar cells, with the emphasis on growth of well-ordered Si QDs, on photoresponse control of Si QDs, and on approaches to reduce the lattice thermalization loss in Si QDs solar cells.

Paper Details

Date Published: 18 February 2011
PDF: 6 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952V (18 February 2011); doi: 10.1117/12.888167
Show Author Affiliations
Wen Zhong Shen, Shanghai Jiao Tong Univ. (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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