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Proceedings Paper

Silicon nitride thin films deposited by DC pulse reactive magnetron sputtering
Author(s): Xiao-Feng Zhang; Pei-Gang Wen; Yue Yan
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Paper Abstract

Silicon nitride (SiNx) thin films were deposited by DC pulse reactive magnetron sputtering at ambient temperature. These films were characterized by spectroscopic ellipsometry(SE), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). It is found that among several regulable parameters, pulse frequency, target power density, reactive gas flow rate (or working pressure) could significantly influence the optical properties and compositions of SiNx thin film more than the reverse time. The rotation of substrate which used to improve the uniformity in the radial direction also can be utilized to alter the in-depth composition distribution of the films. SiNx film with high refractive index (~2.00) and ultra low extinction coefficient (<10-3) were obtained on the optimal deposition conditions. It could be concluded that, compared to many disadvantages existing in various chemical vapour deposition (CVD) or radio frequency (RF) magnetron sputtering, DC pulse reactive magnetron sputtering is an alternative method to produce SiNxfilms for the increasing application especially as the moisture barriers for flexible electronics and optoelectronics.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951M (18 February 2011); doi: 10.1117/12.888164
Show Author Affiliations
Xiao-Feng Zhang, Beijing Institute of Aeronautical Materials (China)
Pei-Gang Wen, Beijing Institute of Aeronautical Materials (China)
Yue Yan, Beijing Institute of Aeronautical Materials (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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