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Proceedings Paper

Red electroluminescence of diamond thin films
Author(s): Xiaoping Wang; Yuzhuan Zhu; Xinxin Liu
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Paper Abstract

A diamond/SiO2/ indium-tin oxide (ITO) thin film multilayer structure of electroluminescent devices was reported. Effects of process parameters on morphologies and structures of the thin films were detected and analyzed by scanning electron microscopy, X-ray diffraction (XRD) spectrometer and X-ray photoelectron spectrometer (XPS). Finally a strong monochromatic red light emission was observed from this multilayer structure device, the electroluminescence spectrum at room temperature shows that the only illumination peak locates at 742nm, which is attributed to silicon atoms within the diamond film impurity center.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951K (18 February 2011); doi: 10.1117/12.888163
Show Author Affiliations
Xiaoping Wang, Univ. of Shanghai for Science and Technology (China)
Yuzhuan Zhu, Univ. of Shanghai for Science and Technology (China)
Xinxin Liu, Univ. of Shanghai for Science and Technology (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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