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Proceedings Paper

Active layer design of THz GaN quantum cascade lasers
Author(s): HungChi Chou; Tariq Manzur; Mehdi Anwar
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Paper Abstract

The structural, material and field dependence of the THz lasing frequency is reported for a QCL based upon GaN/AlGaN heterostructures. The inter-subband transition initiated generation of THz followed by the LO-phonon assisted fast depopulation takes into account the appropriate energy band alignments. Valence and conduction band alignments incorporating spin-orbit and crystal field splitting as well as bi-axial strain are used to determine the conduction band offset as a function of Al-mole fraction. Determination of eigen states takes into account the spontaneous and piezoelectric polarization induced modification in the conduction band profile. A lower THz generation frequency is predicted for Ga-face GaN/AlGaN-based QCLs using the revised energy band alignments.

Paper Details

Date Published: 26 May 2011
PDF: 10 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802309 (26 May 2011); doi: 10.1117/12.888007
Show Author Affiliations
HungChi Chou, Univ. of Connecticut (United States)
Tariq Manzur, Naval Undersea Warfare Ctr. (United States)
Mehdi Anwar, Univ. of Connecticut (United States)


Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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