Share Email Print
cover

Proceedings Paper

Terahertz imaging with InP high-electron-mobility transistors
Author(s): Takayuki Watanabe; Keisuke Akagawa; Yudai Tanimoto; Dominique Coquillat; Wojciech Knap; Taiichi Otsuji
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation ΔId becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at θ = 160 degrees.

Paper Details

Date Published: 26 May 2011
PDF: 6 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230P (26 May 2011); doi: 10.1117/12.887952
Show Author Affiliations
Takayuki Watanabe, Tohoku Univ. (Japan)
Keisuke Akagawa, Tohoku Univ. (Japan)
Yudai Tanimoto, Tohoku Univ. (Japan)
Dominique Coquillat, CNRS, Univ. Montpellier 2 (France)
Wojciech Knap, CNRS, Univ. Montpellier 2 (France)
Taiichi Otsuji, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

© SPIE. Terms of Use
Back to Top