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Proceedings Paper

InP and InGaAs Schottky-type terahertz emitter excited at a wavelength of 1560 nm
Author(s): Masayoshi Tonouchi; Masato Suzuki; Kazunori Serita; Iwao Kawayama; Hironaru Murakami
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Paper Abstract

We examine InP and InGaAs Schottky type photoconductive antenna for the THz generation excited by femtosecond laser(fs) at a wavelength of 1560nm. Since InP has an energy gap of 1.3 eV, which is much larger than photon energy of fs laser. We obtained THz wave generation from both PC antennas with sufficient THz amplitude, which is comparative to that of low temperature grown GaAs.We also developed new type of InGaAs PC antennas which includes insulating gap in a PC structure.Highly bright THz beam was generated from the InGaAs PC antennas.

Paper Details

Date Published: 25 May 2011
PDF: 6 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230L (25 May 2011); doi: 10.1117/12.887938
Show Author Affiliations
Masayoshi Tonouchi, Osaka Univ. (Japan)
Masato Suzuki, Osaka Univ. (Japan)
Kazunori Serita, Osaka Univ. (Japan)
Iwao Kawayama, Osaka Univ. (Japan)
Hironaru Murakami, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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