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Proceedings Paper

Phonon engineering in nanoscale layered structures
Author(s): A. Rostami; A. Alizade; H. Bagban; T. Alizade; H. Balazadeh Bahar
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Paper Abstract

Thermal conductivity in GaN/AlGaN heterostructures is investigated by solving the steady-state phonon Boltzman equation in the relaxation-time approximation using phonon density of state, average group velocity and phonon relaxation time. In this paper dispersion curves, group velocity, density of states of energy, relaxation time of phonon and finally thermal conduction of several types of symmetric and asymmetric nanostructures are simulated. It has been concluded that proper selection of layer widths yields minimum thermal conduction in the considered structure. Also, making the structure asymmetric, affects the thermal conduction.

Paper Details

Date Published: 7 January 2011
PDF: 8 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870F (7 January 2011); doi: 10.1117/12.887838
Show Author Affiliations
A. Rostami, Univ. of Tabriz (Iran, Islamic Republic of)
A. Alizade, Univ. of Tabriz (Iran, Islamic Republic of)
Bonab Higher Education Complex (Iran, Islamic Republic of)
H. Bagban, Univ. of Tabriz (Iran, Islamic Republic of)
T. Alizade, Bonab Higher Education Complex (Iran, Islamic Republic of)
H. Balazadeh Bahar, Univ. of Tabriz (Iran, Islamic Republic of)


Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V

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