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Proceedings Paper

Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer
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Paper Abstract

Self-assembled lateral aligned InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown on GaAs substrate by metal-organic chemical vapor deposition. The effects of growth temperature and In content of InxGa1-xAs on the structural and optical properties of QDMs are investigated by using atomic force microscopy and photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely spaced InAs QDs are formed, and a redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.

Paper Details

Date Published: 7 January 2011
PDF: 6 pages
Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870N (7 January 2011); doi: 10.1117/12.887835
Show Author Affiliations
Y. Yu, Huazhong Univ. of Science and Technology (China)
L. R. Huang, Huazhong Univ. of Science and Technology (China)
P. Tian, Huazhong Univ. of Science and Technology (China)
D. X. Huang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7987:
Optoelectronic Materials and Devices V
Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang, Editor(s)

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