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Proceedings Paper

Solution processible nanoparticle thermoelectric materials
Author(s): Ngoc Nguyen; George M. Williams; Thomas Allen; David Schut; David C. Johnson
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Paper Abstract

The fabrication of stoichiometric (BixSb1- x)2Te3 thermoelectric films comprised of nanostructured building blocks were fabricated using solution processing compatible methods. Nanostructured films of n-type Bi2Te3, (Bi0.75Sb0.25)2Te3, and (Bi0.50Sb0.50)2Te3 and p-type (Bi0.25Sb0.75)2Te3 and Sb2Te3 TE thermoelectric materials were fabricated using intercalated and exfoliated stoichiometric bulk materials. Fine control was exerted over the composition and reaction to maintain the purity and effectiveness of the nanostructured alloys composition of the materials as they were deposited, pressed, and annealed in a Te-rich ambient. A Seebeck coefficient was measured to be -235 μVK-1 for the n-type Bi2Te3 films, and 262 μVK-1 for the p-type (Bi0.25S0.75)2Te3 films. Although limited by high resistance, due to cracking of the films, ZT was estimated to be between 0.8 and 1.69 for the n-type films and an order of magnitude lower for the p-type films.

Paper Details

Date Published: 17 May 2011
PDF: 12 pages
Proc. SPIE 8035, Energy Harvesting and Storage: Materials, Devices, and Applications II, 803514 (17 May 2011); doi: 10.1117/12.887752
Show Author Affiliations
Ngoc Nguyen, Voxtel, Inc. (United States)
George M. Williams, Voxtel, Inc. (United States)
Thomas Allen, Voxtel, Inc. (United States)
David Schut, Voxtel, Inc. (United States)
David C. Johnson, Univ. of Oregon (United States)

Published in SPIE Proceedings Vol. 8035:
Energy Harvesting and Storage: Materials, Devices, and Applications II
Nibir K. Dhar; Priyalal S. Wijewarnasuriya; Achyut K. Dutta, Editor(s)

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