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Proceedings Paper

Preparation and characterization of free-standing Zr, PI and Zr/PI filter
Author(s): Heyun Wu; Yonggang Wu; Gang Lv; Zhenhua Wang; Leijie Ling; Zihuan Xia; Naibo Chen
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Paper Abstract

A thin PI film equal to or less than 200nm was fabricated on a Zr film to improve the mechanical characteristics of the latter. The PI film was prepared by two-step process. Througth fully reaction between Pyromellitic Dianhydride (PMDA) and Oxydianiline (ODA) in Dimethylacetamide (DMAC), polyamic acid (PAA) was produced. After the deposition of Zr film on floating glass using direct-current magnetron sputtering, PAA was prepared on the Zr film through dip-coating and then thermally imidized to form the PI film. The transmission spectrum obtained by using synchrotron radiation fits with calculation result fairly well. Although the combination of the PI film with Zr film results in the decline of the transmission, the mechanical strength of the composite film is improved, and the transmittances of the Zr(300nm)/PI(200nm) and Zr(400nm)/PI(200nm) films reach 14.9% and 7.5% respectively at 13.9 nm, still satisfying the actual requirement.

Paper Details

Date Published: 18 February 2011
PDF: 4 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951F (18 February 2011); doi: 10.1117/12.887562
Show Author Affiliations
Heyun Wu, Tongji Univ. (China)
Yonggang Wu, Tongji Univ. (China)
Gang Lv, Tongji Univ. (China)
Zhenhua Wang, Tongji Univ. (China)
Leijie Ling, Tongji Univ. (China)
Zihuan Xia, Tongji Univ. (China)
Naibo Chen, Tongji Univ. (China)

Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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