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Proceedings Paper

Analysis of internal crack propagation in silicon due to permeable pulse laser irradiation: study on processing mechanism of stealth dicing
Author(s): Etsuji Ohmura; Yuta Kawahito; Kenshi Fukumitsu; Junji Okuma; Hideki Morita
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Paper Abstract

Stealth dicing (SD) is an innovative dicing method developed by Hamamatsu Photonics K.K. In the SD method, a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave propagates every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside the wafer after the thermal shock wave propagation. In our previous study, it was concluded that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse overlaps with this layer partially. In the experimental result, the trace that a crack is progressed gradually step by step was observed. In this study, the possibility of internal crack propagation by laser pulses was investigated. A two-dimensional thermal stress analysis based on the linear fracture mechanics was conducted using the stress distribution obtained by the axisymmetric thermal stress analysis. As a result, the validity of the hypothesis based on a heat transfer analysis result previously presented was supported. Also it was concluded that the internal crack is propagated by at least two pulses.

Paper Details

Date Published: 28 February 2011
PDF: 8 pages
Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 799603 (28 February 2011); doi: 10.1117/12.887431
Show Author Affiliations
Etsuji Ohmura, Osaka Univ. (Japan)
Yuta Kawahito, Osaka Univ. (Japan)
Kenshi Fukumitsu, Hamamatsu Photonics K.K. (Japan)
Junji Okuma, Hamamatsu Photonics K.K. (Japan)
Hideki Morita, Hamamatsu Photonics K.K. (Japan)


Published in SPIE Proceedings Vol. 7996:
Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010
Vadim P. Veiko; Tigran A. Vartanyan, Editor(s)

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