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Proceedings Paper

Large format high-operability SWIR and MWIR focal plane array performance and capabilities
Author(s): James Bangs; Mark Langell; Madhu Reddy; Leon Melkonian; Scott Johnson; Lee Elizondo; Kimon Rybnicek; Elyse Norton; Frank Jaworski; James Asbrock; Stefan Baur
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Paper Abstract

High-performance large-format detector arrays responsive to the 1-5μm wavelength range of the infrared spectrum fabricated using large area HgCdTe layers grown on 6-inch diameter (211) silicon substrates are available for advanced imaging applications. This paper reviews performance and capabilities of Raytheon Vision Systems (RVS) HgCdTe/Si Focal Plane Arrays (FPA) and shows 2k x 2k format MWIR HgCdTe/Si FPA performance with NEdT operabilities better than 99.9%. SWIR and MWIR detector performance for HgCdTe/Si is comparable to established performance of HgCdTe/CdZnTe wafers. HgCdTe devices fabricated on both types of substrates have demonstrated very low dark current, high quantum efficiency and full spectral band fill factor characteristic of HgCdTe. HgCdTe has the advantage of being able to precisely tune the detector cutoff via adjustment of the Cd composition in the MBE growth. The HgCdTe/Si detectors described in this paper are p-on-n mesa delineated architecture and fabricated using the same mature etch, passivation, and metallization processes as our HgCdTe/CdZnTe line. Uniform device quality HgCdTe epitaxial layers and application of detector fabrication processes across the full area of 6-inch wafers routinely produces high performing detector pixels from edge to edge of the photolithographic limits across the wafer, offering 5 times the printable area as costly 6×6cm CdZnTe substrates. This 6-inch HgCdTe detector wafer technology can provide applications demanding very wide FOV high resolution coverage the capability to produce a very large single piece infrared detector array, up to a continuous image plane 10×10 cm in size. Alternatively, significant detector cost reduction through allowing more die of a given size to be printed on each wafer is possible, with further cost reduction achieved through transition towards automated detector fabrication and photolithographic processes for both increased yields and reduced touch labor costs. RVS continues to improve its FPA manufacturing line towards achieving low cost infrared FPAs with the format, size, affordability, and performance required for current and future infrared applications.

Paper Details

Date Published: 20 May 2011
PDF: 12 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801234 (20 May 2011); doi: 10.1117/12.887417
Show Author Affiliations
James Bangs, Raytheon Vision Systems (United States)
Mark Langell, Raytheon Vision Systems (United States)
Madhu Reddy, Raytheon Vision Systems (United States)
Leon Melkonian, Raytheon Vision Systems (United States)
Scott Johnson, Raytheon Vision Systems (United States)
Lee Elizondo, Raytheon Vision Systems (United States)
Kimon Rybnicek, Raytheon Vision Systems (United States)
Elyse Norton, Raytheon Vision Systems (United States)
Frank Jaworski, Raytheon Vision Systems (United States)
James Asbrock, Raytheon Vision Systems (United States)
Stefan Baur, Raytheon Vision Systems (United States)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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