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Proceedings Paper

A MEMS-based thermal infrared emitter for an integrated NDIR spectrometer
Author(s): C. Calaza; M. Salleras; N. Sabaté; J. Santander; C. Cané; L. Fonseca
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Paper Abstract

Micromachined thermal infrared emitters using heavily boron doped silicon as active material have been developed. The proposed fabrication process allows the integration of infrared emitters with arrays of thermopile infrared detectors to achieve integrated non dispersive infrared (NDIR) microspectrometers. A set of emitters with a common radiating silicon slab size (1100x300x8μm3) has been successfully fabricated and characterized. The working temperature of Joule heated radiating elements has been controlled by means of DC or pulsed electric signals, up to temperatures exceeding 800°C. Measured thermal time constants, in the order of 50 ms, enable direct electrical modulation of emitted radiation up to a frequency of 5Hz with full modulation depth. The temperature distribution in the radiating element has been analyzed with infrared thermal imaging.

Paper Details

Date Published: 5 May 2011
PDF: 8 pages
Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 806627 (5 May 2011); doi: 10.1117/12.887099
Show Author Affiliations
C. Calaza, Instituto de Microelectrónica de Barcelona (Spain)
M. Salleras, Instituto de Microelectrónica de Barcelona (Spain)
N. Sabaté, Instituto de Microelectrónica de Barcelona (Spain)
J. Santander, Instituto de Microelectrónica de Barcelona (Spain)
C. Cané, Instituto de Microelectrónica de Barcelona (Spain)
L. Fonseca, Instituto de Microelectrónica de Barcelona (Spain)


Published in SPIE Proceedings Vol. 8066:
Smart Sensors, Actuators, and MEMS V
Ulrich Schmid; José Luis Sánchez-Rojas; Monika Leester-Schaedel, Editor(s)

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