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Proceedings Paper

Silicon SPAD with near-infrared enhanced spectral response
Author(s): Francesco Panzeri; Angelo Gulinatti; Ivan Rech; Massimo Ghioni; Sergio Cova
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Paper Abstract

We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.

Paper Details

Date Published: 6 May 2011
PDF: 7 pages
Proc. SPIE 8072, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III, 807206 (6 May 2011); doi: 10.1117/12.887021
Show Author Affiliations
Francesco Panzeri, Politecnico di Milano (Italy)
Angelo Gulinatti, Politecnico di Milano (Italy)
Ivan Rech, Politecnico di Milano (Italy)
Massimo Ghioni, Politecnico di Milano (Italy)
Micro-Photon-Devices (Italy)
Sergio Cova, Politecnico di Milano (Italy)
Micro-Photon-Devices (Italy)


Published in SPIE Proceedings Vol. 8072:
Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III
Jaromír Fiurásek; Ivan Prochazka, Editor(s)

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