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Proceedings Paper

GaAs/AlGaAs light emitting diode with 2D photonic structure in the surface
Author(s): L. Suslik; D. Pudis; J. Skriniarova; J. Kovac; I. Kubicova; P. Tvarozek; I. Martincek; J. Novak
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Paper Abstract

In this paper, effect of two-dimensional photonic pattern on the properties of the GaAs/AlGaAs based light emitting diode (LED) is demonstrated. The interference lithography was employed to surface patterning of the GaAs/AlGaAs based LED. The active region of the LED includes a GaAs/AlGaAs triple quantum well emitting at 850 nm. Interference lithography was used for preparation of two-dimensional pattern in the upper diode layer. The prepared LED with two-dimensional patterned photonic crystal structure was then investigated by electrical and optical measurements. Prepared photonic crystal LED shows enhanced light extraction efficiency due to the more effective extraction of guiding modes, what was documented from finite difference time domain simulations as well as from L(I) measurements.

Paper Details

Date Published: 18 May 2011
PDF: 7 pages
Proc. SPIE 8070, Metamaterials VI, 807017 (18 May 2011); doi: 10.1117/12.887002
Show Author Affiliations
L. Suslik, Univ. of Zilina (Slovakia)
D. Pudis, Univ. of Zilina (Slovakia)
J. Skriniarova, Slovak Univ. of Technology (Slovakia)
J. Kovac, Slovak Univ. of Technology (Slovakia)
I. Kubicova, Univ. of Zilina (Slovakia)
P. Tvarozek, Univ. of Zilina (Slovakia)
I. Martincek, Univ. of Zilina (Slovakia)
J. Novak, Institute of Electrical Engineering (Slovakia)


Published in SPIE Proceedings Vol. 8070:
Metamaterials VI
Vladimir Kuzmiak; Peter Markos; Tomasz Szoplik, Editor(s)

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