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Proceedings Paper

Dark current study for CMOS fully integrated-PIN-photodiodes
Author(s): Jordi Teva; Stefan Jessenig; Ingrid Jonak-Auer; Franz Schrank; Ewald Wachmann
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Paper Abstract

PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors, charge-coupled devices and pulse oximeters for medical applications. The possibility to combine and to integrate the fabrication of the sensor with its signal conditioning circuitry in a CMOS process allows device miniaturization in addition to enhance its properties lowering the production and assembly costs. This paper presents the design and characterization of silicon based PIN photodiodes integrated in a CMOS commercial process. A high-resistivity, low impurity substrate is chosen as the start material for the PIN photodiode array fabrication in order to fabricate devices with a minimum dark current. The dark current is studied, analyzed and measured for two different starting materials and for different geometries. A model previously proposed is reviewed and compared with experimental data.

Paper Details

Date Published: 9 May 2011
PDF: 9 pages
Proc. SPIE 8073, Optical Sensors 2011; and Photonic Crystal Fibers V, 80731P (9 May 2011); doi: 10.1117/12.886985
Show Author Affiliations
Jordi Teva, austriamicrosystems AG (Austria)
Stefan Jessenig, austriamicrosystems AG (Austria)
Ingrid Jonak-Auer, austriamicrosystems AG (Austria)
Franz Schrank, austriamicrosystems AG (Austria)
Ewald Wachmann, austriamicrosystems AG (Austria)

Published in SPIE Proceedings Vol. 8073:
Optical Sensors 2011; and Photonic Crystal Fibers V
Kyriacos Kalli; Francesco Baldini; Jiri Homola; Robert A. Lieberman, Editor(s)

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