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Proceedings Paper

MCT IR detectors in France
Author(s): Gérard Destéfanis; Philippe Tribolet; Michel Vuillermet; David Billon Lanfrey
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Paper Abstract

This paper describes the status of MCT IR technology in France at Leti and Sofradir. This concerns first evolution of crystal growth of large CZT for substrates, and MCT epilayers grown by LPE and MBE. A focus will be made on extrinsic doping of MCT with Indium and Arsenic for device fabrication. Evolution of detector technology will also be considered for detectors that operate from NIR/SWIR to VLWIR, moving from an n on p vacancy doped technology to a fully extrinsically doped p on n device architecture. Last results on 3rd generation detectors such as multicolor FPAs, HOT detectors and 2D or 3D FPAs that use MCT APD will also be described. Moving to larger FPAs, pixel pitch reduction become mandatory and technology evolution to achieve this goal will be presented .Then, cost reduction achievement through more compact systems that operate at higher temperature and/or integrate optical functions inside the cryostat will also be considered.

Paper Details

Date Published: 21 May 2011
PDF: 12 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801235 (21 May 2011); doi: 10.1117/12.886904
Show Author Affiliations
Gérard Destéfanis, CEA-LETI-MINATEC (France)
Philippe Tribolet, SOFRADIR (France)
Michel Vuillermet, SOFRADIR (France)
David Billon Lanfrey, SOFRADIR (France)


Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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