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Proceedings Paper

Amorphous As-S-Se semiconductor thin films for holography and lithography
Author(s): Vadims Kolbjonoks; Vjaceslavs Gerbreders; Janis Teteris; Andrejs Bulanovs
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Paper Abstract

Electron beam (EB) induced changes in thin films of the amorphous chalcogenide semiconductors As-S-Se have been studied. The experimental results on patterning of As-S-Se film surfaces by EB exposure and following chemical etching are presented. The possibilities of practical application of this material as resists for the production of relief holograms and diffractive optical elements (DOE) are discussed.

Paper Details

Date Published: 11 May 2011
PDF: 7 pages
Proc. SPIE 8074, Holography: Advances and Modern Trends II, 80740U (11 May 2011); doi: 10.1117/12.886837
Show Author Affiliations
Vadims Kolbjonoks, Daugavpils Univ. (Latvia)
Vjaceslavs Gerbreders, Daugavpils Univ. (Latvia)
Janis Teteris, Latvian Univ. (Latvia)
Andrejs Bulanovs, Daugavpils Univ. (Latvia)


Published in SPIE Proceedings Vol. 8074:
Holography: Advances and Modern Trends II
Miroslav Hrabovský; Miroslav Miler; John T. Sheridan, Editor(s)

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