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Proceedings Paper

Comparison among performance of strain sensors based on different semiconductor thin films
Author(s): Mariana A. Fraga; Humber Furlan; Rodrigo S. Pessoa
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Paper Abstract

In recent years, the piezoresistive properties of different semiconductor thin films, with chemical and mechanical stability, have been studied in order to use them as base material in the fabrication of strain sensors for high temperature applications. In this context, this work compares the performance of strain sensors based on sputter-deposited semiconductor thin films such as titanium dioxide (TiO2), silicon carbide (SiC) and diamond-like carbon (DLC) operated at temperatures up to 250°C. The structure of each sensor consists of four thin-film resistors, configured in Wheatstone bridge, with Ti/Au electrical contacts. These strain sensors reported here differ from our previous works in the types of materials used and in the quantity/configuration of the thin-film resistors. The strain sensors were fabricated by photolithography techiques in conjunction with lift-off processes. The beam-bending experiments were performed to characterize the sensors.

Paper Details

Date Published: 5 May 2011
PDF: 9 pages
Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80662G (5 May 2011); doi: 10.1117/12.886624
Show Author Affiliations
Mariana A. Fraga, Instituto de Estudos Avançados (Brazil)
Instituto Tecnológico de Aeronáutica (Brazil)
Humber Furlan, Faculdade de Tecnologia de São Paulo (Brazil)
Rodrigo S. Pessoa, Instituto Tecnológico de Aeronáutica (Brazil)


Published in SPIE Proceedings Vol. 8066:
Smart Sensors, Actuators, and MEMS V
Ulrich Schmid; José Luis Sánchez-Rojas; Monika Leester-Schaedel, Editor(s)

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