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Proceedings Paper

Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors
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Paper Abstract

Recent efforts in developing InAs/GaSb strained-layer superlattices for LWIR detectors are described. The structural properties of the devices grown by MBE at HRL were evaluated using optical microscopy, x-ray diffraction, and atomic force microscopy. Epilayer roughness and surface morphology are briefly described. Small format focal plane arrays were fabricated to serve as a baseline for device study, and to determine the effects of underfill epoxy on detector performance. A novel approach for epilayer transfer on silicon is also presented.

Paper Details

Date Published: 20 May 2011
PDF: 8 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801212 (20 May 2011); doi: 10.1117/12.886503
Show Author Affiliations
Sevag Terterian, HRL Labs., LLC (United States)
Hasan Sharifi, HRL Labs., LLC (United States)
Pierre-Yves Delaunay, HRL Labs., LLC (United States)
Brett Nosho, HRL Labs., LLC (United States)
Mark Roebuck, HRL Labs., LLC (United States)
Rajesh Rajavel, HRL Labs., LLC (United States)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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