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Proceedings Paper

New method for selectivity enhancement of SiC field effect gas sensors for quantification of NOx
Author(s): Christian Bur; Peter Reimann; Mike Andersson; Anita Lloyd Spetz; Andreas Schütze
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Paper Abstract

A Silicon Carbide based enhancement type field effect transistor with porous films of Iridium and Platinum as gate metallization has been investigated as a total NOx sensor operated in a temperature cycling mode. This operating mode is quite new for gas sensors based on the field effect but promising results have been reported earlier. Based on static investigations we have developed a suitable T-cycle for NOx detection in a mixture of typical exhaust gases (CO, C2H4, and NH3). Significant features describing the shape of the sensor response have been extracted allowing determination of NOx concentrations in gas mixtures. Multivariate statistics (e.g. Linear Discriminant Analysis) have been used to evaluate the multidimensional data. With this kind of advanced signal processing the influence of sensor drift and cross sensitivity to ambient gases can effectively be reduced. Thereby, we were able to detect NOx and furthermore determine different concentrations of NOx even in mixtures with typical exhaust gases. It can be concluded that the performance of field effect gas sensors for NOx determination can be enhanced considerably.

Paper Details

Date Published: 5 May 2011
PDF: 11 pages
Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80660I (5 May 2011); doi: 10.1117/12.886431
Show Author Affiliations
Christian Bur, Saarland Univ. (Germany)
Peter Reimann, Saarland Univ. (Germany)
Mike Andersson, Linköping Univ. (Sweden)
Anita Lloyd Spetz, Linköping Univ. (Sweden)
Andreas Schütze, Saarland Univ. (Germany)


Published in SPIE Proceedings Vol. 8066:
Smart Sensors, Actuators, and MEMS V
Ulrich Schmid; José Luis Sánchez-Rojas; Monika Leester-Schaedel, Editor(s)

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