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Proceedings Paper

Suppression of relaxation oscillation in strong optical injection-locked semiconductor laser diode
Author(s): Xiaohui Fang; Wei Li; Jilong Bao; Tiefeng Xu
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Paper Abstract

This paper investigates theoretically the suppression of relaxation oscillation (RO) in strong optical injection-locked semiconductor laser diode (SLD). The theoretical model is based on external injection locking (IL) in a SLD. In our simulation, an adaptive fourth-order Runge-Kutta algorithm is used to solve the rate equations of injection-locked SLD, the temporal evolution of the carrier and the light intensity in the SLD are obtained. Compared with previous reports of weak optical IL, where IL in SLD will experience a RO and finally come to a steady state, it is found in our study that this RO can be suppressed very well when employing strong optical IL, and the settling time in SLD becomes shorter with high intensity of injection; we also find that the suppression level is almost the same with the same injection ratio while different injection detune. And we believe our results of IL in the SLD with dc excitation can contribute to increase the modulation bandwidth of SLD.

Paper Details

Date Published: 31 December 2010
PDF: 6 pages
Proc. SPIE 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 754444 (31 December 2010); doi: 10.1117/12.885671
Show Author Affiliations
Xiaohui Fang, Ningbo Univ. of Technology (China)
Gannan Normal Univ. (China)
Wei Li, Ningbo Univ. of Technology (China)
Ningbo Univ. (China)
Jilong Bao, Ningbo Univ. of Technology (China)
Tiefeng Xu, Ningbo Univ. (China)


Published in SPIE Proceedings Vol. 7544:
Sixth International Symposium on Precision Engineering Measurements and Instrumentation
Jiubin Tan; Xianfang Wen, Editor(s)

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