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Proceedings Paper

Study on optical energy band gap of SrBi[sub]2[/sub]Ta[sub]2[/sub]O[sub]9[/sub] thin films annealed in a H[sub]2[/sub]-contained ambient
Author(s): Dong-sheng Wang; Tao Yu; Di Wu; Ai-dong Li; An Hu; Zhi-guo Liu
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Paper Abstract

SrBi2Ta2O9 (SBT) thin films have been prepared on fused quartz substrates by using metalorgnic decomposition (MOD) method. X-ray diffraction (XRD) patterns show that films are polycrystalline in nature at annealing temperature of 750°C. The original optical energy band gap Eg obtained is about 4.57 eV. The changes of the Eg values of SBT films in H2-contained ambient (forming gas, 5%H2 + 95%N2) at different annealing temperature are investigated by measurement of optical transmittance. The reductive atmosphere and temperature exhibit strong effects on the Eg values and the roughness of SBT films. Some significant changes of Eg values for the films are observed at 450°C and 500°C in the forming gas ambient. The Eg values increase from 4.57eV to 4.81eV and 4.92eV, respectively. These results could be attributed to degradation of polarization of SBT films, which being induced by Bi deficiency. Forming gas ambient has played an important role in the reductive reaction.

Paper Details

Date Published: 28 December 2010
PDF: 7 pages
Proc. SPIE 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 75446Y (28 December 2010); doi: 10.1117/12.885300
Show Author Affiliations
Dong-sheng Wang, Nanjing Univ. of Aeronautics and Astronautics (China)
Tao Yu, Nanjing Univ. (China)
Di Wu, Nanjing Univ. (China)
Ai-dong Li, Nanjing Univ. (China)
An Hu, Nanjing Univ. (China)
Zhi-guo Liu, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 7544:
Sixth International Symposium on Precision Engineering Measurements and Instrumentation
Jiubin Tan; Xianfang Wen, Editor(s)

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