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Proceedings Paper

MWIR LED performance enhancement by nano-plasmon layer
Author(s): Naresh C. Das; W. Chang
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Paper Abstract

We report a significant increase in electroluminescence from GaSb based mid-wave infrared inter band cascade (IC) LED device through coupling with localized surface plasmon layer. Thin Au Plasmon layer of 20 nm thickness is deposited on top anode electrode by e-beam evaporation technique. Surface Plasmon enhancement effects result is 100% increase in light output for 50 μm square mesa device. We fabricated an IC LED device with nine cascade active/injection layers with InAs/Ga1-xInxSb/InAs quantum well (QW) active region.

Paper Details

Date Published: 13 May 2011
PDF: 8 pages
Proc. SPIE 8015, Technologies for Synthetic Environments: Hardware-in-the-Loop XVI, 801504 (13 May 2011); doi: 10.1117/12.884884
Show Author Affiliations
Naresh C. Das, U.S. Army Research Lab. (United States)
W. Chang, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 8015:
Technologies for Synthetic Environments: Hardware-in-the-Loop XVI
Scott B. Mobley, Editor(s)

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