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Proceedings Paper

Scaling up antimonide wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates
Author(s): Mark J. Furlong; Rebecca Martinez; Sasson Amirhaghi; David Small; Brian Smith; Andrew Mowbray
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Paper Abstract

In this paper we describe the growth and characterization of antimonide based compound semiconductor substrates. The Czochralski technique has been used to grow single crystals of 4" InSb and 4" GaSb with dislocation densities of <20/cm2 and <100/cm2, respectively. Epitaxy ready wafer surfaces have been characterized by surface microscopy and spectroscopic ellipsometry, revealing sub-nanometer levels of surface roughness (rms) and oxide coverage in the 10-50 Angstrom range. GaSb wafers with thinner oxides (<20 Angstroms) have been developed and quality assessments made by epitaxial growth testing. Surface morphology evaluations indicate high levels of surface quality, comparable to pretreated variants of the same substrate type. We also illustrate current crystal growth systems and ingot forms, and discuss the challenges associated with scaling present InSb and GaSb technologies to deliver larger substrate formats.

Paper Details

Date Published: 20 May 2011
PDF: 10 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801211 (20 May 2011); doi: 10.1117/12.884450
Show Author Affiliations
Mark J. Furlong, Wafer Technology Ltd. (United Kingdom)
Rebecca Martinez, Wafer Technology Ltd. (United Kingdom)
Sasson Amirhaghi, Wafer Technology Ltd. (United Kingdom)
David Small, Wafer Technology Ltd. (United Kingdom)
Brian Smith, Wafer Technology Ltd. (United Kingdom)
Andrew Mowbray, Wafer Technology Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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