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Proceedings Paper

Thin film silicon and germanium for uncooled microbolometer applications
Author(s): D. B. Saint John; H.-B. Shin; M.-Y. Lee; E. C. Dickey; N. J. Podraza; T. N. Jackson
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Paper Abstract

Hydrogenated silicon (Si:H) and germanium (Ge:H) are assessed for use as the resistive sensing layer in uncooled infrared microbolometer applications. N-type doped Si:H and undoped Ge:H thin films have been deposited using plasma enhanced chemical vapor deposition (PECVD) and monitored during growth using in situ, real time spectroscopic ellipsometry (RTSE) to track changes in the growth evolution and structure occurring within a single film as a function of thickness. Amorphous germanium (a-Ge) films prepared by sputtering and amorphous n-type doped silicon carbon alloy films (a-Si1-xCx:H) films prepared by PECVD have also been studied by ex situ spectroscopic ellipsometry. Variations in the electrical properties of interest including film resistivity, temperature coefficient of resistance, and 1/f noise character in the form of the normalized Hooge parameter have been tracked as a function of the structure of the material as determined by deposition conditions and characterized by spectroscopic ellipsometry. Such notable variations observed include the effects of transitioning from amorphous to microcrystalline material in n-type Si:H; the addition of carbon to increase disorder in n-type a-Si:H; effects of process parameters for sputtered a-Ge; and a comparison of n-type a-Si:H, ntype a-Si1-xCx:H, and undoped a-Ge:H properties for films all prepared by PECVD.

Paper Details

Date Published: 21 May 2011
PDF: 10 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123U (21 May 2011); doi: 10.1117/12.884269
Show Author Affiliations
D. B. Saint John, The Pennsylvania State Univ. (United States)
H.-B. Shin, The Pennsylvania State Univ. (United States)
M.-Y. Lee, The Pennsylvania State Univ. (United States)
E. C. Dickey, North Carolina State Univ. (United States)
N. J. Podraza, The Pennsylvania State Univ. (United States)
Univ. of Toledo (United States)
T. N. Jackson, The Pennsylvania State Univ. (United States)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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