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Proceedings Paper

Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs
Author(s): Jianfei Wang; Timothy Zens; Juejun Hu; Piotr Becla; Anuradha M. Agarwal; Lionel C. Kimerling
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Paper Abstract

In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 109cmHz1/2W1 has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.

Paper Details

Date Published: 17 May 2011
PDF: 8 pages
Proc. SPIE 8034, Photonic Microdevices/Microstructures for Sensing III, 80340K (17 May 2011); doi: 10.1117/12.884081
Show Author Affiliations
Jianfei Wang, Massachusetts Institute of Technology (United States)
Timothy Zens, Massachusetts Institute of Technology (United States)
Juejun Hu, Massachusetts Institute of Technology (United States)
Piotr Becla, Massachusetts Institute of Technology (United States)
Anuradha M. Agarwal, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8034:
Photonic Microdevices/Microstructures for Sensing III
Hai Xiao; Xudong Fan; Anbo Wang, Editor(s)

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