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Proceedings Paper

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT
Author(s): Nima Nader Esfahani; Christopher J. Fredricksen; Gautam Medhi; R. E. Peale; Justin W. Cleary; Walter R. Buchwald; Himanshu Saxena; Oliver J. Edwards
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Paper Abstract

Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for man-portable or space-based spectral-sensing applications.

Paper Details

Date Published: 26 May 2011
PDF: 10 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230R (26 May 2011); doi: 10.1117/12.884005
Show Author Affiliations
Nima Nader Esfahani, Univ. of Central Florida (United States)
Christopher J. Fredricksen, Univ. of Central Florida (United States)
Gautam Medhi, Univ. of Central Florida (United States)
R. E. Peale, Univ. of Central Florida (United States)
Justin W. Cleary, Air Force Research Lab. (United States)
Walter R. Buchwald, Air Force Research Lab. (United States)
Himanshu Saxena, Zyberwear, Inc. (United States)
Oliver J. Edwards, Zyberwear, Inc. (United States)


Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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