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Proceedings Paper

On the role of dislocations in influencing the electrical properties of HgCdTe photodiodes
Author(s): R. K. Sharma; V. Gopal; R. S. Saxena; R. K. Bhan; R. Pal; V. Dhar; R. Muralidharan
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Paper Abstract

The influence of dislocations on the electrical and photo-electric characteristics of HgCdTe has been widely discussed in published literature. However, an unexplored aspect of the dislocations that has not yet attracted the attention of any of the investigators, is the band gap narrowing/widening induced by the intense stress field around dislocation core. Preliminary estimations show that the band gap narrowing due to the tensile region of the stress field along the dislocations in HgCdTe is high enough to cause significant band gap narrowing in low band gap HgCdTe. An enhanced Zener like band-to-band tunneling is proposed in the vicinity of dislocation cores. The calculations presented here qualitatively explain the observed influence of dislocations on HgCdTe photodiode characteristics.

Paper Details

Date Published: 20 May 2011
PDF: 6 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123A (20 May 2011); doi: 10.1117/12.883877
Show Author Affiliations
R. K. Sharma, Solid State Physics Lab. (India)
V. Gopal, Institute of Defence Scientists and Technologists (India)
R. S. Saxena, Solid State Physics Lab. (India)
R. K. Bhan, Solid State Physics Lab. (India)
R. Pal, Solid State Physics Lab. (India)
V. Dhar, Solid State Physics Lab. (India)
R. Muralidharan, Solid State Physics Lab. (India)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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