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Proceedings Paper

Current developments for type-II superlattice imaging systems
Author(s): Frank Rutz; Robert Rehm; Martin Walther; Lutz Kirste; Michael Masur; Andreas Wörl; Johannes Schmitz; Matthias Wauro; Jasmin Niemasz; Ralf Scheibner; Johann Ziegler
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Paper Abstract

InAs/GaSb-based type-II superlattice photodiodes have considerably gained interest as high-performance infrared detectors. Beside the excellent properties of InAs/GaSb superlattices, like the relatively high effective electron mass suppressing tunneling currents, the low Auger recombination rate, and a high quantum efficiency, the bandgap can be widely adjusted within the infrared spectral range from 3 - 30 μm depending on the layer thickness rather than on composition. Superlattice growth and process technology have shown tremendous progress during the last years. Fully integrated superlattice cameras have been demonstrated by several groups worldwide. Within very few years, the InAs/GaSb superlattice technology has proven its suitability for high-performance infrared imaging detector arrays. At Fraunhofer IAF and AIM, the efforts have been focused on developing a mature fabrication technology for bispectral InAs/GaSb superlattice focal plane arrays for a simultaneous, co-located detection at 3-4 μm and 4-5 μm in the mid-wavelength infrared atmospheric transmission window. A very low number of pixel outages and cluster defects is mandatory for dual-color detector arrays. Sources for pixel outages are manifold and might be caused by dislocations in the substrate, the epitaxial growth process or by imperfections during the focal plane array fabrication process. Process refinements, intense root cause analysis and specific test methodologies employed at various stages during the process have proven to be the key for yield enhancements.

Paper Details

Date Published: 21 May 2011
PDF: 12 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120U (21 May 2011); doi: 10.1117/12.883786
Show Author Affiliations
Frank Rutz, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Robert Rehm, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Martin Walther, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Lutz Kirste, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Michael Masur, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Andreas Wörl, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Johannes Schmitz, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Matthias Wauro, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Jasmin Niemasz, Fraunhofer-Institute for Applied Solid State Physics (Germany)
Ralf Scheibner, AIM INFRAROT-MODULE GmbH (Germany)
Johann Ziegler, AIM INFRAROT-MODULE GmbH (Germany)


Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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