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Proceedings Paper

Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications
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Paper Abstract

In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Variable magnetic eld geometrical magnetoresistance mea- surements have been employed to extract the vertical transport parameters, since the Hall-eect technique cannot be employed in the vertical transport conguration. The room-temperature magnetoresistance measurements were performed employing a kelvin-mode set up, at electric elds not exceeding 25 V/cm and at magnetic eld intensities up to 12 T. The measured magnetoresistance, shown to exhibit multiple-carrier conduction charac- teristics, were analyzed using a high-resolution mobility spectrum analysis technique. It is shown that, at room temperature, the electrical conductivity of the sample is due to four distinct carriers, associated with the major- ity carrier holes, sidewall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.

Paper Details

Date Published: 20 May 2011
PDF: 6 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120Y (20 May 2011); doi: 10.1117/12.883755
Show Author Affiliations
G. A. Umana-Membreno, The Univ. of Western Australia (Australia)
B. Klein, The Univ. of New Mexico (United States)
H. Kala, The Univ. of Western Australia (Australia)
J. Antoszewski, The Univ. of Western Australia (Australia)
G. Gautam, The Univ. of New Mexico (United States)
M. N. Kutty, The Univ. of New Mexico (United States)
E. Plis, The Univ. of New Mexico (United States)
J. M. Dell, The Univ. of Western Australia (Australia)
S. Krishna, The Univ. of New Mexico (United States)
L. Faraone, The Univ. of Western Australia (Australia)


Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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